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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC4051 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V(Min) *Fast Switching Speed *Low Saturation Voltage APPLICATIONS *Switching regulators *High frequency inverters *General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VCEX VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage VEB= 5V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Total Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 600 450 600 7 3 6 1 2 40 150 -55~150 UNIT V V V V A A A A W IBM PT TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.12 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4051 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 450 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.5 V A A A ICBO ICEO Collector Cutoff Current At rated Voltage 100 Collector Cutoff Current At rated Voltage 100 IEBO Emitter Cutoff Current At rated Voltage 100 hFE-1 DC Current Gain IC= 1.5A ; VCE= 5V 10 hFE-2 DC Current Gain IC= 1mA ; VCE= 5V 5 fT Current-Gain--Bandwidth Product IC= 0.3A ; VCE= 10V 20 MHz Switching times s s s ton tstg tf Turn-on Time IC= 1.5A , IB1=0.3A; IB2= -0.6A RL= 100; VBB2= 4V 0.5 Storage Time 2.0 Fall Time 0.2 isc Websitewww.iscsemi.cn 2 |
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